FGPF4533 Fairchild Semiconductor, FGPF4533 Datasheet - Page 5

• Manufacturer Part Number: FGPF4533
• Description: IGBT Transistors 330V 50A 4th Gen PDP IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF4533

• Collector- Emitter Voltage Vceo Max: 330 V
• Collector-emitter Saturation Voltage: 1.15 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 28.4 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGPF4533 Rev. B
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 15. Switching Loss vs. Gate Resistance
Figure 17. Turn off Switching SOA Characteristics
500
100
5000
1000
0.1
10
100
100
1
10
10
1
1
10
0
Collector Current
Common Emitter
V
I
T
T
C
C
C
CC
= 20A
= 25
= 125
Collector-Emitter Voltage, V
= 200V, V
10
o
C
o
20
C
Collector Current, I
Gate Resistance, R
t
t
d(on)
r
GE
10
= 15V
20
Safe Operating Area
V
GE
30
= 15V, T
30
Common Emitter
V
T
T
GE
C
C
C
G
= 25
= 125
C
[A]
E
E
100
= 15V, R
[ Ω ]
on
off
= 125
CE
o
40
C
o
[V]
C
40
o
C
G
= 5
Ω
500
50
50
5
Figure 16. Switching Loss vs. Collector Current
Figure 14. Turn-off Characteristics vs.
1000
100
400
100
10
10
1
10
10
Common Emitter
V
T
T
C
C
GE
= 25
= 125
= 15V, R
Collector Current
o
C
o
20
C
20
Collector Current, I
Collector Current, I
G
= 5
E
E
off
on
Ω
30
30
Common Emitter
V
T
T
GE
C
C
C
= 25
= 125
C
[A]
= 15V, R
[A]
40
o
40
C
o
C
t
d(off)
G
t
f
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= 5
Ω
50
50