FCB36N60NTM Fairchild Semiconductor, FCB36N60NTM Datasheet

Bipolar Power 600V NChannel MOSFET SupreMOST

FCB36N60NTM

Manufacturer Part Number
FCB36N60NTM
Description
Bipolar Power 600V NChannel MOSFET SupreMOST
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCB36N60NTM

Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP, N-Channel
Mounting Style
SMD/SMT
Package / Case
D2PAK
Power Dissipation
312 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity:
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©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*When mounted on the minmium pad size recommended (PCB Mount)
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FCB36N60N
N-Channel MOSFET
600V, 36A, 90m
Features
• R
• Ultra low gate charge ( Typ. Qg = 86nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
*Drain current limited by maximum junction temperature
D
DM
AR
J
L
DSS
GSS
AS
AR
D
JC
JA
JA
, T
Symbol
Symbol
DS(on)
*
STG
= 81m ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
G
GS
= 10V, I
S
D
= 18A
T
C
= 25
Parameter
Parameter
D
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
o
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
FCB36N60N
FCB36N60N
-55 to +150
S
D
1800
22.7
3.12
62.5
600
±30
108
100
312
300
2.6
0.4
36
12
20
40
SupreMOS
September 2010
www.fairchildsemi.com
Units
W/
Units
o
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FCB36N60NTM Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient * * JA R Thermal Resistance, Junction to Ambient JA *When mounted on the minmium pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. A Description = 18A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies ...

Page 2

Package Marking and Ordering Information Device Marking Device FCB36N60N FCB36N60N Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 5. Capacitance Characteristics FCB36N60N Rev. A Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve FCB36N60N Rev. A (Continued) Figure 8. On-Resistance Variation vs. Temperature Figure 10. Maximum Drain Current vs. Case Temperature ...

Page 5

FCB36N60N Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FCB36N60N Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FCB36N60N Rev PAK 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

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