FDPF5N60NZ Fairchild Semiconductor, FDPF5N60NZ Datasheet

MOSFET Power 600V, N-Channel MOSFET, UniFET-II

FDPF5N60NZ

Manufacturer Part Number
FDPF5N60NZ
Description
MOSFET Power 600V, N-Channel MOSFET, UniFET-II
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDPF5N60NZ

Gate Charge Qg
10 nC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
2.7 A, 4.5 A
Power Dissipation
33 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF5N60NZ
Manufacturer:
SANYO
Quantity:
1 200
Part Number:
FDPF5N60NZ
Manufacturer:
Fairchi/ON
Quantity:
17 390
©2010 Fairchild Semiconductor Corporation
FDP5N60NZ / FDPF5N60NZ Rev. A
MOSFET Maximum Ratings
*Dran current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP5N60NZ / FDPF5N60NZ
N-Channel MOSFET
600V, 4.5A, 2.0
Features
• R
• Low Gate Charge ( Typ. 10nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.65 ( Typ.)@ V
( Typ. 5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient
G D S
GS
TO-220
FDP Series
= 10V, I
D
= 2.25A
T
C
Parameter
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
= 25
C
= 25
o
C unless otherwise noted
o
G
C)
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(potting)
*
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
FDP5N60NZ
FDP5N60NZ
1.25
62.5
100
4.5
2.7
0.8
0.5
18
-55 to +150
G
G
600
±25
175
300
4.5
10
10
UniFET-II
FDPF5N60NZ
FDPF5N60NZ
November 2010
0.27
3.75
62.5
4.5*
2.7*
18*
33
-
www.fairchildsemi.com
D
D
S
S
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDPF5N60NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. A Description = 2.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... G 4.5A, di/dt  200A/s, V  Starting DSS 4. Pulse test: Pulse width s,Duty Cycle  5. Essentially Independent of Operating Temperature Typical Characteristics FDP5N60NZ / FDPF5N60NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Drain Current [A] D Figure 5. Capacitance Characteristics 1000 100 iss = shorted C oss = rss = Drain-Source Voltage [V] DS FDP5N60NZ / FDPF5N60NZ Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V GS o *Note Figure 6 ...

Page 4

... Figure 9. Maximum Safe Operating Area -FDPF5N60NZ Operation in This Area is Limited by R 0.1 *Notes Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP5N60NZ / FDPF5N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation *Notes  250 120 160   100 s 1ms 10ms DS(on ...

Page 5

... FDP5N60NZ / FDPF5N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP5N60NZ / FDPF5N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

Mechanical Dimensions FDP10N60NZ / FDPF10N60NZ Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP10N60NZ / FDPF10N60NZ Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N60NZ / FDPF5N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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