FDD850N10L Fairchild Semiconductor, FDD850N10L Datasheet - Page 3

• Manufacturer Part Number: FDD850N10L
• Description: MOSFET N-CH 100V 15.7A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD850N10L

• Input Capacitance (ciss) @ Vds: 1465pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 28.9nC @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 64 mOhms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 15.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD850N10L Rev. A5
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
5000
1000
100
100
10
10
1
0.1
0.1
0
V
*Note:
GS
1. V
2. f = 1MHz
Drain Current and Gate Voltage
= 15.0V
GS
10.0V
V
10
6.0V
5.0V
3.5V
3.0V
V
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
1
20
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
V
GS
= 5V
1
*Notes:
30
1. 250
2. T
*Note: T
V
10
C
GS
= 25
μ
(
= 10V
C ds = shorted
s Pulse Test
o
40
C
C
= 25
C
C
C
rss
iss
oss
o
C
)
50
100
10
3
100
100
0.1
Figure 2. Transfer Characteristics
10
Figure 4. Body Diode Forward Voltage
10
Figure 6. Gate Charge Characteristics
10
1
1
8
6
4
2
0
0.2
0
0
*Notes:
1. V
2. 250
V
DS
0.4
SD
4
μ
= 10V
, Body Diode Forward Voltage [V]
s Pulse Test
V
Variation vs. Source Current
and Temperature
Q
GS
175
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
0.6
2
o
V
V
V
8
C
DS
DS
DS
175
= 20V
= 50V
= 80V
o
C
0.8
12
-55
25
o
o
*Notes:
1. V
2. 250
C
*Note: I
C
25
1.0
4
16
o
GS
C
μ
= 0V
s Pulse Test
D
= 15.7A
1.2
20
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1.4
6
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