FDMC6679AZ Fairchild Semiconductor, FDMC6679AZ Datasheet - Page 2

• Manufacturer Part Number: FDMC6679AZ
• Description: MOSFET P-CH 30V POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6679AZ

• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
∆T
∆T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 53 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
pad of 2 oz copper
I
I
V
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= -11.5 A, di/dt = 100 A/µs
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= -24 V,
= 0 V,
= -10 V, I
= -5 V, I
= -15 V, V
= 0 V, I
= 0 V, I
= ±25 V, V
= V
= -10 V, I
= -4.5 V, I
= -15 V, I
= -10 V, R
= 0 V to -10 V
= 0 V to -5 V
DS
2
Test Conditions
, I
S
S
D
D
= -11.5 A
= -1.6 A
D
D
D
= -11.5 A
= -250 µA
D
GS
GEN
GS
DS
= -11.5 A, T
= -11.5 A
= -11.5 A,
= -8.5 A
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
T
DD
J
= -11.5 A
= 125 °C
= -15 V,
J
= 125 °C
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
θJC
is guaranteed by design while R
Min
-30
-1
2985
0.83
0.71
570
500
-1.8
Typ
4.3
8.6
8.7
12
12
46
31
16
-7
12
14
63
46
65
37
17
29
3970
Max
-100
1.30
1.20
750
755
±10
100
θCA
10
18
15
49
28
-3
21
25
73
91
52
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
nC
nC
ns
V
V
S
Ω
ns
ns
ns
ns
V