FDD7N25LZTM Fairchild Semiconductor, FDD7N25LZTM Datasheet - Page 7

• Manufacturer Part Number: FDD7N25LZTM
• Description: MOSFET N-CH 250V 6.2A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD7N25LZTM

• Input Capacitance (ciss) @ Vds: 635pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
D-PAK
Dimensions in Millimeters
Dimensions in Millimeters
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FDD7N25LZ Rev. A
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