FDMC7692S Fairchild Semiconductor, FDMC7692S Datasheet - Page 2

• Manufacturer Part Number: FDMC7692S
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMC7692S

• Input Capacitance (ciss) @ Vds: 1385pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7692S Rev.C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. E
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
V
the user's board design.
Symbol
DSS
T
T
AS
GS(th)
JA
DSS
J
J
of 21 mJ is based on starting T
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(Note 2)
J
= 25
Parameter
°
C, L = 0.3 mH, I
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
a. 53 °C/W when mounted on a
= 25 °C unless otherwise noted
1 in
AS
2
pad of 2 oz copper.
= 12.0 A, V
DD
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
T
V
V
V
I
I
I
V
V
D
F
= 27 V, V
D
D
DD
GS
GS
GS
GS
GS
GS
GS
J
DS
DS
GS
GS
DS
GS
= 12.5 A, di/dt = 300 A/ s
= 10 mA, referenced to 25 °C
= 1 mA, V
= 10 mA, referenced to 25 °C
= 125 °C
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
GS
DS
Test Conditions
= 10 V. 100% test at L = 3 mH, I
, I
D
S
S
D
GS
D
D
D
= 12.5 A
= 0.9 A
D
= 12.5 A
GS
GEN
GS
DS
= 1 mA
= 12.5 A,
= 12.5 A
= 12.5 A
= 10.4 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6
V
I
D
DD
= 12.5 A
= 15 V
(Note 2)
(Note 2)
JC
AS
is guaranteed by design while R
= 3.2 A .
b. 125 °C/W when mounted on a
Min
1.2
30
minimum pad of 2 oz copper.
1040
10.8
445
0.9
0.5
1.1
Typ
2.0
7.8
9.6
40
21
16
62
19
16
-5
16
9
3
3
8
4
2
1385
13.6
13.0
Max
590
2.9
1.3
0.7
500
100
3.0
9.3
60
33
29
17
10
34
10
23
10
www.fairchildsemi.com
CA
is determined by
mV/°C
mV/°C
Units
m
nC
pF
pF
pF
nA
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V
A