FDMC8622 Fairchild Semiconductor, FDMC8622 Datasheet - Page 5

• Manufacturer Part Number: FDMC8622
• Description: MOSFET N-CH 100V 4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8622

• Input Capacitance (ciss) @ Vds: 402pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 7.3nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 56 mOhms
• Forward Transconductance Gfs (max / Min): 8.9 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 16 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC8622 Rev.C
Typical Characteristics
0.0001
0.01
0.1
1
2
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
T
θ
J
JA
= 25°C unless otherwise noted
= 125
10
o
C/W
-2
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
100
2
θJA
t
1
+ T
t
2
A
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