FDT86102LZ Fairchild Semiconductor, FDT86102LZ Datasheet - Page 3

• Manufacturer Part Number: FDT86102LZ
• Description: MOSFET N-CH 100V 6.6A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDT86102LZ

• Input Capacitance (ciss) @ Vds: 1490pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 28 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDT86102LZ Rev. C
©2010 Fairchild Semiconductor Corporation
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
40
30
20
10
0
Figure 3. Normalized On-Resistance
0
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 6.6 A
vs Junction Temperature
= 5 V
= 10 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
T
1
DS
-25
J
GS
On-Region Characteristics
,
1
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
V
DRAIN TO SOURCE VOLTAGE (V)
GS
V
GS
0
= 3.5 V
V
= 4.5 V
GS
T
2
J
= 10 V
25
= 150
μ
s
2
o
50
T
C
μ
J
3
s
= 25 °C unless otherwise noted
75
T
J
T
= -55
J
3
o
100 125 150
C )
= 25
V
4
o
GS
V
C
GS
o
= 2.5 V
C
= 3 V
4
5
3
0.001
150
120
0.01
0.1
90
60
30
40
10
Figure 2.
Figure 4.
5
4
3
2
1
0
0
1
0.0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
2
Figure 6.
0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
GS
= 2.5 V
V
= 0 V
0.2
SD
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
V
T
On-Resistance vs Gate to
GS
J
Source Voltage
I
= 150
10
Source to Drain Diode
D
4
,
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
I
D
J
0.4
= 6.6 A
= 25
o
C
o
C
μ
s
0.6
20
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
T
GS
J
V
= 125
GS
T
= 3 V
J
= 4.5 V
= -55
0.8
T
o
J
C
= 25
o
30
8
C
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V
V
o
1.0
GS
C
GS
= 3.5 V
= 10 V
μ
s
1.2
10
40