FDB8160_F085 Fairchild Semiconductor, FDB8160_F085 Datasheet

MOSFET N-CH 30V 80A D2PAK

FDB8160_F085

Manufacturer Part Number
FDB8160_F085
Description
MOSFET N-CH 30V 80A D2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8160_F085

Input Capacitance (ciss) @ Vds
11825pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
243nC @ 10V
Power - Max
254W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Power Dissipation
254 W
Mounting Style
SMD/SMT
Fall Time
27 ns
Gate Charge Qg
187 nC
Rise Time
18.9 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDB8160_F085 Rev. C
FDB8160_F085
N-Channel PowerTrench
30V, 80A, 1.8mΩ
Features
Typ r
Typ Q
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DS(on)
g(10)
= 187nC at V
= 1.5mΩ at V
GS
GS
= 10V
= 10V, I
FDB SERIES
TO-263AB
D
= 80A
®
MOSFET
1
Applications
12V Automotive Load Control
Starter/Alternator Systems
Electronic Power Steering Systems
DC/DC converter
October 2010
www.fairchildsemi.com

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FDB8160_F085 Summary of contents

Page 1

... Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev. C ® MOSFET Applications = 80A 12V Automotive Load Control D Starter/Alternator Systems Electronic Power Steering Systems ...

Page 2

... Gate Resistance Q Total Gate Charge at 10V g(TOT) Q Threshold Gate Charge g(th) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller“ Charge gd FDB8160_F085 Rev 25°C unless otherwise noted C Parameter o < 160 10V (Note 1) 2 copper Package Reel Size ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDB8160_F085 Rev ...

Page 4

... D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 3. 10000 V = 10V GS 1000 100 SINGLE PULSE FDB8160_F085 Rev. C 350 300 250 200 150 100 50 0 125 150 175 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance -3 -2 ...

Page 5

... I 80A = D DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE V GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8160_F085 Rev. C 1000 ≠ 100 100us 10 1ms 10ms 100ms DC 1 0.01 90 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching 160 ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 50000 10000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDB8160_F085 Rev 250 μ 1.05 1.00 0.95 0.90 80 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB8160_F085 Rev. C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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