FDB8160_F085 Fairchild Semiconductor, FDB8160_F085 Datasheet - Page 6

• Manufacturer Part Number: FDB8160_F085
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8160_F085

• Input Capacitance (ciss) @ Vds: 11825pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Mounting Style: SMD/SMT
• Fall Time: 27 ns
• Gate Charge Qg: 187 nC
• Rise Time: 18.9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB8160_F085 Rev. C
Typical Characteristics
Figure 11.
Figure 13.
50000
10000
1000
100
1.2
1.0
0.8
0.6
0.4
-80
0.1
f = 1MHz
V
Normalized Gate Threshold Voltage vs
GS
-40
T
= 0V
Junction Temperature
V
J
Capacitance vs Drain to Source
, JUNCTION TEMPERATURE
DS
, DRAIN TO SOURCE VOLTAGE
0
Voltage
1
40
80
10
120
(
o
C
V
I
D
)
GS
= 250 μ
160
(
=
V
V
C
C
C
)
DS
rss
oss
iss
A
200
80
6
Figure 14.
Breakdown Voltage vs Junction Temperature
10
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
= 80A
I
Gate Charge vs Gate to Source Voltage
D
= 1mA
-40
T
J
50
, JUNCTION TEMPERATURE
Q
g
0
, GATE CHARGE(nC)
40
100
V
DD
80
V
DD
= 12 V
= 18V
150
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120
V
DD
(
o
= 15 V
C
160
)
200
200