IS42S32800B-7TL INTEGRATED SILICON SOLUTION (ISSI), IS42S32800B-7TL Datasheet - Page 10
![no-image](/images/manufacturer_photos/0/3/335/integrated_silicon_solution__issi__sml.jpg)
IS42S32800B-7TL
Manufacturer Part Number
IS42S32800B-7TL
Description
IC, SDRAM, 256MBIT, 143MHZ, TSOP-86
Manufacturer
INTEGRATED SILICON SOLUTION (ISSI)
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7TL
Memory Type
DRAM - Sychronous
Access Time
7ns
Page Size
256Mbit
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
-40°C To +85°C
Frequency
143MHz
Termination Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800B
10
CLK
D Q M
COMMAND
DQ’s
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank.The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS#latency.
CLK
DQM
COMMAND
CAS# latency=2
t CK2 , DQ’s
CLK
DQM
COMMAND
CAS# latency=2
: "H" or "L"
tCK2, DQs
: "H" or "L"
: "H" or "L"
tCK2, DQs
NOP
T0
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =3)
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
READ A
T1
T1
NOP
T1
NOP
READ A
T2
NOP
ACTIVAT E
T2
BANKA
T2
T3
T3
NOP
NOP
T3
NOP
DOUT A
NOP
T4
T4
READ A
NOP
T4
1 Clk Interval
the Write Command
Must be Hi-Z before
WRITEB
NOP
T5
T5
DIN B 0
WRITEA
T5
DIN A 0
WRITE B
DIN B 1
T6
DINB 0
T6
NOP
DIN A 1
NOP
T6
Integrated Silicon Solution, Inc.
NOP
T7
T7
DINB 1
NOP
DIN B 2
T7
NOP
DIN A 2
NOP
NOP
T8
DINB 2
T8
DIN B 3
NOP
T8
DIN A 3
07/21/09
Rev. F