IS42S32800B-7TL INTEGRATED SILICON SOLUTION (ISSI), IS42S32800B-7TL Datasheet - Page 54

• Manufacturer Part Number: IS42S32800B-7TL
• Description: IC, SDRAM, 256MBIT, 143MHZ, TSOP-86
• Manufacturer: INTEGRATED SILICON SOLUTION (ISSI)

Specifications of IS42S32800B-7TL

• Memory Type: DRAM - Sychronous
• Access Time: 7ns
• Page Size: 256Mbit
• Memory Case Style: TSOP
• No. Of Pins: 86
• Operating Temperature Range: -40°C To +85°C
• Frequency: 143MHz
• Termination Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800B
54
Figure 19.3.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency=3)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Command
Bank A
Write
CAx
DAx
DAx+1 DAx+2 DAx+3 DAx-1 DAx
Command
Activate
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RBx
RBx
DAx+1 DBx
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Command
Bank B
CBx
Write
DBx+1
DBx+3 DBx+4 DBx+5
Burst Stop
Command
Integrated Silicon Solution, Inc.
Precharge
Command
Bank B
Data is ignor ed
Command
Activate
Bank B
RBy
RBy
07/21/09
Rev. F