DF1000R17IE4 Infineon Technologies, DF1000R17IE4 Datasheet - Page 3

• Manufacturer Part Number: DF1000R17IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of DF1000R17IE4

• Module Configuration: Chopper
• Transistor Polarity: N Channel
• Dc Collector Current: 1000A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 6.25kW
• No. Of Pins: 12
• Collector Emitter Saturation Voltage Vce(sat): 2V
• Rohs Compliant: Yes
• Ic (max): 1,000.0 A
• Vce(sat) (typ): 2.0 V
• Configuration: chopper
• Technology: IGBT4
• Housing: PrimePACK™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
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