FF1000R17IE4 Infineon Technologies, FF1000R17IE4 Datasheet - Page 6

• Manufacturer Part Number: FF1000R17IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF1000R17IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 1000A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 6.25kW
• No. Of Pins: 12
• Collector Emitter Saturation Voltage Vce(sat): 2V
• Channel Type: N
• Configuration: Dual
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Ic (max): 1,000.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT4
• Housing: PrimePACK™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
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