FF900R12IP4 Infineon Technologies, FF900R12IP4 Datasheet - Page 8

• Manufacturer Part Number: FF900R12IP4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF900R12IP4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 5.1kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.7V
• Channel Type: N
• Configuration: Dual
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Ic (max): 900.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FF900R12IP4
8
Vorläufige Daten
preliminary data