BSP297 Infineon Technologies, BSP297 Datasheet - Page 4
![N CH MOSFET, 200V, 600mA, SOT-223](/photos/19/8/190865/4467709_sml.jpg)
BSP297
Manufacturer Part Number
BSP297
Description
N CH MOSFET, 200V, 600mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BSP297.pdf
(8 pages)
Specifications of BSP297
Transistor Polarity
N Channel
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Package
SOT-223
Vds (max)
200.0 V
Rds (on) (max) (@10v)
1,800.0 mOhm
Rds (on) (max) (@4.5v)
3,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP297
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
BSP297
Manufacturer:
INF
Quantity:
28 000
Company:
Part Number:
BSP297
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSP297
Manufacturer:
INF
Quantity:
20 000
Part Number:
BSP297 H6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSP297 L6327
Manufacturer:
Infineon Technologies
Quantity:
1 830
Company:
Part Number:
BSP297E6327
Manufacturer:
RAYCHEM
Quantity:
3 998
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
= f (T
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
-3
1
0
1
0
10
0
BSP297
BSP297
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
100
10
DC
2
120
t p = 100.0µs
1 ms
10 ms
°C
V
T
V
Rev. 1.21
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
0.75
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
0.6
0.5
0.4
0.3
0.2
0.1
A
= f (t
-1
-2
0
2
1
0
10
0
BSP297
BSP297
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
³ 10 V
-3
p
10
/T
60
-2
10
80
-1
10
100
0
10
2006-09-28
120
1
10
D = 0.50
BSP297
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4