BSS139 Infineon Technologies, BSS139 Datasheet - Page 7

• Manufacturer Part Number: BSS139
• Description: N CHANNEL MOSFET, 250V, 40mA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BSS139

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40mA
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 100ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -1.4V
• Package: SOT-23
• Vds (max): 250.0 V
• Id (max): 0.1 A
• Idpuls (max): 0.4 A
• Rds (on) (max) (@10v): 14.0 Ohm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.5
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
300
280
260
240
220
0.1
SD
1
=f(T
-60
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
0.8
60
[°C]
25 °C
[V]
150 °C, 98%
100
25 °C, 98%
1.2
140
180
1.6
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-2
-4
8
6
4
2
0
0
gate
); I
DD
D
=0.1 A pulsed
1
Q
0.2 VDS(max)
gate
[nC]
2
0.5 VDS(max)
0.8 VDS(max)
2006-04-27
BSS139
3