BSP129 Infineon Technologies, BSP129 Datasheet

N CH MOSFET, 240V, 120mA, SOT-223

BSP129

Manufacturer Part Number
BSP129
Description
N CH MOSFET, 240V, 120mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP129

Transistor Polarity
N Channel
Continuous Drain Current Id
120mA
Drain Source Voltage Vds
240V
On Resistance Rds(on)
20ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
-1.4V
Package
SOT-223
Vds (max)
240.0 V
Id (max)
0.35 A
Idpuls (max)
1.4 A
Rds (on) (max) (@10v)
6.0 Ohm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP129
Manufacturer:
TOS
Quantity:
5 510
Part Number:
BSP129
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSP129 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSP129E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSP129H6327
Quantity:
2 500
Part Number:
BSP129H6327XTSA1
0
Part Number:
BSP129L6327
Manufacturer:
Infineon
Quantity:
3 800
Rev. 1.1
1)
SIPMOS
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSP129
BSP129
see table on next page and diagram 11
®
Small-Signal-Transistor
Package
PG-SOT-
PG-SOT-
223
GS(th)
indicator on reel
j
=25 °C, unless otherwise specified
Ordering Code
Q67000-S073
Q67042 S4294
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Tape and Reel Information
E6327: 1000 pcs/reel
E6906: 1000 pcs/reel
sorted in V
T
T
T
I
V
di /dt =200 A/µs,
T
T
D
A
A
A
j,max
A
DS
=0.36 A,
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=192 V,
=150 °C
GS(th)
Product Summary
V
R
I
DSS,min
DS
DS(on),max
bands
1)
-55 ... 150
55/150/56
Class 1
Value
0.35
0.28
Marking
BSP129
BSP129
±20
1.4
1.8
PG-SOT-223
6
0.05
240
6
BSP129
2005-02-22
Unit
A
kV/µs
V
W
°C
V
A

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BSP129 Summary of contents

Page 1

... Symbol Conditions I T =25 ° =70 ° =25 °C D,pulse A I =0. =192 /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSP129 240 6 0.05 PG-SOT-223 Marking BSP129 BSP129 1) Value Unit 0.35 A 0.28 1.4 6 kV/µs ±20 V Class 1 1.8 W -55 ... 150 °C 55/150/56 2005-02-22 V Ω A ...

Page 2

... DSS =25 mA DS(on = =0. |>2 DS(on)max =0. =108 µA GS(th (single layer, 70 µm thick) copper area for page 2 Values min. typ. max 115 240 - -2 4.2 6.0 , 0.18 0.36 -1 -1.35 - -1.15 -1.5 - -1.3 -1.65 - -1.45 -1.8 - -1.6 BSP129 Unit K µ Ω 2005-02-22 ...

Page 3

... MHz C rss t d(on) V =120 =-2... =7.6 Ω d(off =192 plateau =25 ° S,pulse V =- =0. =25 ° =120 /dt =100 A/µ page 3 BSP129 Values Unit min. typ. max 108 4.4 6 4.1 6 0.24 0. 1.7 2.6 - 3.8 5 1.4 - 0.79 1 2005-02-22 ...

Page 4

... DS A parameter limited by on-state resistance Rev. 1.1 2 Drain current I =f 0.4 0.3 0.2 0.1 0 120 160 4 Max. transient thermal impedance Z =f(t thJA parameter µs 100 µ [V] page 4 ≥ 120 T [° 0.5 0.2 0.1 0.05 single pulse 0.02 0. [s] p BSP129 160 2005-02-22 ...

Page 5

... V -0 [V] 8 Typ. forward transconductance g =f 0.6 0.5 0.4 0.3 0.2 0 0.00 [V] page =25 ° 0.5 V -0 0 0.05 0.1 0.15 0.2 0.25 I [A] D =25 °C j 0.10 0.20 0.30 0.40 0.50 I [A] D BSP129 0.3 0.35 0.60 0.70 2005-02-22 ...

Page 6

... V [V] GS Rev. 1.1 10 Typ. gate threshold voltage V =f(T GS(th) parameter -0.5 -1 -1.5 -2 typ -2.5 -3 100 140 180 12 Typ. capacitances C =f 108 µ -0.5 page =108 µ typ 2 % -60 - 100 T [° =- MHz [V] DS BSP129 140 180 Ciss Coss Crss 30 2005-02-22 ...

Page 7

... SD 16 Drain-source breakdown voltage V =f =250 µA BR(DSS 280 240 200 -60 - [°C] j Rev. 1.1 15 Typ. gate charge V =f(Q GS parameter 150 ° ° 1.5 2 [V] 100 140 180 page =0.2 A pulsed gate D DD 0.2 VDS(max [nC] gate BSP129 0.5 VDS(max) 0.8 VDS(max) 4 2005-02-22 ...

Page 8

... Package Outline: Footprint: Dimensions in mm Rev. 1.1 Packaging: page 8 BSP129 2005-02-22 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 BSP129 2005-02-22 ...

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