BSP171P Infineon Technologies, BSP171P Datasheet - Page 3

• Manufacturer Part Number: BSP171P
• Description: P CH MOSFET, -60V, 1.45A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP171P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.45A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): 450.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 2.3
2)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
2)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
oss
rr
V
V
V
V
I
V
V
V
T
V
T
V
di
D
A
j
GS
DS
DD
GS
DD
GS
DD
GS
R
=-1.9 A, R
=25 °C
F
page 3
=25 °C
=-30 V, I
/dt =100 A/µs
=-25 V, f =1 MHz
=0 V,
=-25 V,
=-10 V,
=-48 V, I
=0 to -10 V
=-15 V, V
=0 V, I
F
=1.9 A,
F
G
=|I
D
=6
GS
=1.9 A,
S
=0 V
|,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.84
-125
typ.
365
105
208
-1.2
-13
40
25
87
80
-5
-3
-5
6
-
-
max.
-190
460
135
276
130
-1.6
-1.9
-7.6
-1.1
120
-20
55
33
-7
-7
8
-
BSP171P
2005-11-29
Unit
pF
ns
nC
V
A
V
ns
nC