BSP296 Infineon Technologies, BSP296 Datasheet

N CHANNEL MOSFET, 100V, 1A, SOT-223

BSP296

Manufacturer Part Number
BSP296
Description
N CHANNEL MOSFET, 100V, 1A, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP296

Transistor Polarity
N Channel
Continuous Drain Current Id
1A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Package
SOT-223
Vds (max)
100.0 V
Rds (on) (max) (@10v)
700.0 mOhm
Rds (on) (max) (@4.5v)
1,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Feature
SIPMOS
Type
BSP296
BSP296
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Pb-free lead plating; RoHS compliant
=1.1A, V
=25°C
=70°C
=25°C
=25°C
DS
=80V, di/dt=200A/µs, T
Small-Signal-Transistor
Package
P-SOT-223
PG-SOT-223
j
= 25 °C, unless otherwise specified
jmax
Tape and Reel Information
E6327
L6327
=150°C
Rev. 1.3
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
GS
tot
j ,
T
stg
Marking
BSP296
BSP296
-55... +150
55/150/56
Class 1
Product Summary
V
R
I
D
Value
DS
DS(on)
0.88
1.79
±20
1.1
4.4
6
PG-SOT-223
4
2005-11-23
100
0.7
1.1
BSP296
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
A
3

Related parts for BSP296

BSP296 Summary of contents

Page 1

... E6327 L6327 = 25 °C, unless otherwise specified Symbol puls dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT-223 4 Marking BSP296 BSP296 Value 1.1 0.88 4.4 6 ±20 GS Class 1 1.79 tot T -55... +150 j , stg 55/150/56 BSP296 100 V 0.7 1 VPS05163 Unit A kV/µ °C 2005-11-23 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.3 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSP296 Values Unit min. typ. max K 115 - - 70 Values Unit min. typ. max. 100 - - V 0.8 1 ...

Page 3

... Q V =80V, I =1. =80V, I =1.1A 10V GS V (plateau) V =80V 1 =25° = =50V /dt=100A/µ Page 3 BSP296 Values min. typ. max. 0.6 1 291 364 - 5.2 7.8 - 7.9 11.8 - 37.4 56.1 - 21.4 32.1 - 0.7 0 7.5 - 13.8 17 4.4 - 0.82 1.2 - 44.3 55 ...

Page 4

... Drain current parameter: V 1.3 A 1.1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 °C 100 120 160 Transient thermal impedance Z thJA parameter : K 120.0µ Page BSP296 100 120 = BSP296 single pulse - 2005-11-23 BSP296 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. forward transconductance g = f(I DS(on)max fs parameter 1.2 0.8 0.4 2.4 2.8 3 Page ° 2.1V 2.5V 2.7V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 ° 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2005-11-23 BSP296 3.1V 3.7V 3.9V 4. 10V ...

Page 6

... Forward character. of reverse diode °C parameter iss 10 C oss - rss - Page =400µ 98% typ. 2% -60 - 100 ) SD 1 BSP296 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 2005-11-23 BSP296 °C 160 ...

Page 7

... Typ. gate charge parameter 1.1 A pulsed BSP296 0 max 0 max 6 0 max Rev. 1.3 14 Drain-source breakdown voltage , V DS (BR)DSS = 25 °C j 120 V 114 112 110 108 106 104 102 100 - Page BSP296 - 100 2005-11-23 BSP296 °C 180 T j ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 Page 8 BSP296 2005-11-23 ...

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