BSS138N Infineon Technologies, BSS138N Datasheet - Page 2

• Manufacturer Part Number: BSS138N
• Description: N CHANNEL MOSFET, 60V, 230mA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BSS138N

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 230mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Package: SOT-23
• Vds (max): 60.0 V
• Rds (on) (max) (@10v): 3,500.0 mOhm
• Rds (on) (max) (@4.5v): 6,000.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 2.5
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
V
V
V
V
V
V
V
|V
I
D
GS
GS
DS
GS
DS
GS
GS
GS
GS
GS
=0.18 A
DS
page 2
=60 V,
=60 V,
= 0 V, I
=V
=0 V, T
=0 V, T
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
|>2|I
DS
D
, I
|R
D
D
j
j
=25 °C
=150 °C
D
=250 µA
=26 µA
DS(on)max
D
D
DS
=0.23 A
=0.03 A
=0.19 A
=0 V
,
min.
0.6
0.1
60
-
-
-
-
-
-
-
Values
typ.
1.0
3.3
3.5
2.2
0.2
1
-
-
-
-
max.
350
1.4
0.1
4.0
6.0
3.5
10
5
-
-
BSS138N
2006-05-17
Unit
K/W
V
µA
nA
S