BSS84P Infineon Technologies, BSS84P Datasheet - Page 2

• Manufacturer Part Number: BSS84P
• Description: P CH MOSFET, -60V, 170mA, SOT-23
• Manufacturer: Infineon Technologies

Specifications of BSS84P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 170mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-23
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 8,000.0 mOhm
• Rds (on) (max) (@4.5v): 12,000.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.3
Electrical Characteristics, at
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=-20µA
=-60V, V
=-60V, V
=0, I
=-20V, V
=-4.5V, I
=-10V, I
2
D
cooling area
=-250µA
D
D
GS
GS
DS
=-0.17A
=-0.14A
=0,
=0,
=0
T A
T A
1)
=25°C
=125°C
GS
= V
T A
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-1.5
-10
typ.
-10
5.8
8
-
-
-
-
max.
max.
-100
-100
350
300
200
12
2005-07-21
-2
-1
8
-
BSS 84 P
Unit
V
µA
nA
Unit
K/W