IPB019N08N3 G Infineon Technologies, IPB019N08N3 G Datasheet
IPB019N08N3 G
Manufacturer Part Number
IPB019N08N3 G
Description
MOSFET, N CH, 180A, 80V, PG-TO263-7
Manufacturer
Infineon Technologies
Datasheet
1.IPB019N08N3_G.pdf
(9 pages)
Specifications of IPB019N08N3 G
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
1.6mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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