KSH122 Fairchild Semiconductor, KSH122 Datasheet

TRANSISTOR, NPN, D-PAK

KSH122

Manufacturer Part Number
KSH122
Description
TRANSISTOR, NPN, D-PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSH122

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
20W
Dc Collector Current
8A
Transistor Case Style
D-PAK
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Collector Emitter
RoHS Compliant
Dc Current Gain Hfe
1000
Rohs Compliant
Yes
©2002 Fairchild Semiconductor Corporation
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
C
V
V
V
I
I
I
P
T
T
V
I
I
I
h
V
V
V
C
CP
B
CEO
CBO
EBO
FE
J
STG
CBO
CEO
EBO
C
CEO
CE
BE
BE
ob
Symbol
Symbol
(sat)
(on)
(sat)
(sus)
*Collector-Emitter Sustaining Voltage
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
*Base-Emitter On Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
T
C
=25 C unless otherwise noted
KSH122
- 65 ~ 150
Value
1.75
100
100
150
120
16
20
5
8
I
V
V
V
V
V
I
I
I
V
V
f= 0.1MHz
C
C
C
C
CE
CB
EB
CE
CE
CE
CB
= 30mA, I
= 4A, I
= 8A, I
= 8A, I
= 50V, I
= 100V, I
= 5V, I
= 4V, I
= 4V, V
= 4V, I
= 10V, I
Test Condition
1
B
B
B
C
= 16mA
= 80mA
= 80mA
C
C
Units
EB
mA
B
B
E
= 0
W
W
= 4A
= 4A
V
V
V
A
A
C
C
E
1.Base
= 0
=0
= 0
= 8A
= 0
D-PAK
B
2.Collector
R 2 0.12 k
R 1 8 k
Equivalent Circuit
1
1000
Min.
100
100
R1
3.Emitter
Max.
12K
200
4.5
2.8
10
10
R2
2
2
4
Rev. A4, October 2002
I-PAK
C
E
Units
mA
pF
V
V
V
V
V
A
A

Related parts for KSH122

KSH122 Summary of contents

Page 1

... Current Gain FE V (sat) *Collector-Emitter Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE V (on) *Base-Emitter On Voltage BE C Output Capacitance ob * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSH122 1 T =25 C unless otherwise noted C Value Units 100 100 120 = =25 C) 1.75 a ...

Page 2

... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10 t STG 0.1 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 0.1 0.01 0.1 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 0.01 10 100 0.1 100 V =30V CC ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A4, October 2002 ...

Page 4

... Package Dimensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...

Page 5

... Package Dimensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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