BDP949 Infineon Technologies, BDP949 Datasheet

TRANSISTOR, NPN, SOT-223

BDP949

Manufacturer Part Number
BDP949
Description
TRANSISTOR, NPN, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BDP949

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
3W
Dc Collector Current
3A
Transistor Case Style
SOT-223
No. Of Pins
3
Collector Emitter Voltage Vces
500mV
Dc Current Gain Hfe
85
Rohs Compliant
Yes
Packages
SOT223
Polarity
NPN
Vceo (max)
60.0 V
Ptot (max)
5,000.0 mW
Hfe (min)
85.0 - 475.0
Ic
3,000.0 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BDP949
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BDP949 E6327
Manufacturer:
SINDENGEN
Quantity:
6 423
Part Number:
BDP949E6327
Manufacturer:
VISHAY
Quantity:
4 500
Part Number:
BDP949E6327HTSA1
Manufacturer:
INFINEON
Quantity:
15 000
Part Number:
BDP949H6327
Manufacturer:
INFINEON
Quantity:
34 200
Type
BDP947
BDP949
Thermal Resistance
Parameter
Junction - soldering point
Silicon NPN Transistors
• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BDP948, BDP950 (PNP)
Maximum Ratings
Parameter
Collector-emitter voltage
BDP947
BDP949
Collector-base voltage
BDP947
BDP949
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
1 For calculation of R
S
≤ 99 °C
thJA
please refer to Application Note Thermal Resistance
Marking
BDP947
BDP949
1)
1=B
1=B
2=C
2=C
Pin Configuration
1
3=E
3=E
Symbol
R
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
CEO
CBO
EBO
tot
j
stg
thJS
4=C
4=C
4
-
-
-65 ... 150
Value
Value
BDP947, BDP949
≤ 17
200
500
150
45
60
45
60
-
-
5
3
5
3
Package
SOT223
SOT223
2006-01-24
Unit
K/W
Unit
V
A
mA
W
°C
1
2
3

Related parts for BDP949

BDP949 Summary of contents

Page 1

... Application Note Thermal Resistance thJA Pin Configuration 1=B 2=C 3=E 4=C 1=B 2=C 3=E 4=C Symbol V CEO V CBO V EBO tot stg Symbol R thJS 1 BDP947, BDP949 Package - - SOT223 - - SOT223 Value Unit 200 mA 500 3 W 150 °C -65 ... 150 Value Unit ≤ 17 K/W 2006-01-24 3 ...

Page 2

... Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BDP947 mA BDP949 C B Collector-base breakdown voltage I = 100 µ BDP947 100 µ BDP949 C E Emitter-base breakdown voltage = 10 µ Collector-base cutoff current 150 ° Emitter-base cutoff current current gain mA 500 mA Collector-emitter saturation voltage 0 Base emitter saturation voltage ...

Page 3

... Collector-emitter saturation voltage C = ƒ Collector current -50°C 25°C 100° 0.8 1 1.3 V BEsat 3 BDP947, BDP949 ), CEsat 100°C 25°C 2 -50° 0.1 0.2 0.3 0.4 = ƒ 0.2 0.4 0.6 0.8 2006-01-24 V 0.6 V CEsat -50°C 25°C 100° 1.3 ...

Page 4

... Collector-base capacitance C A Emitter-base capacitance C 500 pF 400 350 300 250 200 150 typ 100 50 100 120 °C 150 ƒ Permissible Pulse Load R tot 120 °C 100 150 BDP947, BDP949 cb = ƒ CEB ƒ thJS 0.5 0.2 0 0.1 0.05 0.02 0.01 0.005 2006-01-24 = ƒ ...

Page 5

... Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 0.02 0.05 0.1 0.2 0 BDP947, BDP949 2006-01-24 ...

Page 6

... Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. 3.5 1.2 1.1 Manufacturer Date code (Year/Calendarweek) Type code Example 8 6.8 6 BDP947, BDP949 1.6 ±0.1 0.1 MAX 2005, June BCP52-16 0.3 MAX. 1.75 2006-01-24 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. BDP947, BDP949 7 2006-01-24 ...

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