BSP296L6327 Infineon Technologies, BSP296L6327 Datasheet

MOSFET, N, LOGIC, REEL 1K

BSP296L6327

Manufacturer Part Number
BSP296L6327
Description
MOSFET, N, LOGIC, REEL 1K
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP296L6327

Transistor Polarity
N Channel
Continuous Drain Current Id
1A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.4V
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP296L6327
Manufacturer:
Infineon
Quantity:
500
Company:
Part Number:
BSP296L6327
Quantity:
324
Feature
SIPMOS
Type
BSP296
BSP296
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Pb-free lead plating; RoHS compliant
=1.1A, V
=25°C
=70°C
=25°C
=25°C
DS
=80V, di/dt=200A/µs, T
Small-Signal-Transistor
Package
P-SOT-223
PG-SOT-223
j
= 25 °C, unless otherwise specified
jmax
Tape and Reel Information
E6327
L6327
=150°C
Rev. 1.3
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
GS
tot
j ,
T
stg
Marking
BSP296
BSP296
-55... +150
55/150/56
Class 1
Product Summary
V
R
I
D
Value
DS
DS(on)
0.88
1.79
±20
1.1
4.4
6
PG-SOT-223
4
2005-11-23
100
0.7
1.1
BSP296
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
A
3

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BSP296L6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated • Pb-free lead plating; RoHS compliant Type Package P-SOT-223 BSP296 PG-SOT-223 BSP296 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot A BSP296 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...

Page 5

Typ. output characteristic parameter ° 3.7V 3.9V 4.1V 4.3V 1.6 4.5V 10V 1.4 1.2 1 0.8 0.6 0.4 0 0.5 1 ...

Page 6

Drain-source on-state resistance DS(on) j parameter : BSP296 2.8 2.4 2.2 2 1.8 1.6 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 0 -60 -20 20 ...

Page 7

Typ. gate charge parameter 1.1 A pulsed BSP296 0 max 0 max 6 0 max 4 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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