BSP296 L6327 Infineon Technologies, BSP296 L6327 Datasheet

MOSFET N-CH 100V 1.1A SOT-223

BSP296 L6327

Manufacturer Part Number
BSP296 L6327
Description
MOSFET N-CH 100V 1.1A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSP296 L6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 1.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
1.8V @ 400µA
Gate Charge (qg) @ Vgs
17.2nC @ 10V
Input Capacitance (ciss) @ Vds
364pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A
Power Dissipation
1790 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Other names
BSP296 L6327
BSP296L6327INTR
BSP296L6327XT
Feature
SIPMOS
Type
BSP296
BSP296
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Pb-free lead plating; RoHS compliant
=1.1A, V
=25°C
=70°C
=25°C
=25°C
DS
=80V, di/dt=200A/µs, T
Small-Signal-Transistor
Package
P-SOT-223
PG-SOT-223
j
= 25 °C, unless otherwise specified
jmax
Tape and Reel Information
E6327
L6327
=150°C
Rev. 1.3
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
GS
tot
j ,
T
stg
Marking
BSP296
BSP296
-55... +150
55/150/56
Class 1
Product Summary
V
R
I
D
Value
DS
DS(on)
0.88
1.79
±20
1.1
4.4
6
PG-SOT-223
4
2005-11-23
100
0.7
1.1
BSP296
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
A
3

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