BSP296 L6327 Infineon Technologies, BSP296 L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP296 L6327
• Description: MOSFET N-CH 100V 1.1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP296 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: BSP296 L6327; BSP296L6327INTR; BSP296L6327XT

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP296
0.2 V
0.5 V
0.8 V
I
2
D
G
DS max
DS max
DS max
= 1.1 A pulsed, T
); parameter: V
4
6
8
10 12 14 16 18 nC 21
DS
j
= 25 °C
,
Q
Rev. 1.3
G
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
120
114
112
110
108
106
104
102
100
V
98
96
94
92
90
-60
BSP296
= f ( T
-20
j
)
20
60
100
2005-11-23
BSP296
°C
T
j
180