BSP296 L6327 Infineon Technologies, BSP296 L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP296 L6327
• Description: MOSFET N-CH 100V 1.1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP296 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: BSP296 L6327; BSP296L6327INTR; BSP296L6327XT

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f ( V
A
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.2
0.8
0.4
A
2
1
0
2
0
0
0
3.7V
3.9V
4.1V
4.3V
4.5V
10V
DS
GS
0.4 0.8 1.2 1.6
)
); V
0.5
j
j
= 25 °C, V
= 25 °C
DS
1
2 x I
1.5
D
2
GS
x R
2.4 2.8 3.2
DS(on)max
2
3.1V
2.7V
2.1V
2.5V
V
V
V
V
Rev. 1.3
DS
GS
3
4
Page 5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
1.4
1.1
0.8
0.5
0.2
1.2
0.8
0.4
S
2
2
0
0
0
D
= f (I
)
0.2 0.4 0.6 0.8
0.2 0.4 0.6 0.8
2.1V
D
j
j
= 25 °C, V
= 25 °C
)
2.5V 2.7V
1
1
GS
1.2 1.4 1.6
1.2 1.4 1.6
2005-11-23
3.1V
BSP296
I
I
A
A
D
D
3.7V
3.9V
4.5V
5V
6V
10V
2
2