BSP298 Infineon Technologies, BSP298 Datasheet
BSP298
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SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) • Pb-free lead plating; RoHS compliant Type Package BSP 298 P-SOT-223 BSP 298 PG-SOT-223 Maximum Ratings Parameter Continuous drain ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance 0 DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage ...
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Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I =f parameter : ...
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Typ. output characteristics parameter µ ° 1 tot 1.0 I ...
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Drain-source on-resistance (on) j parameter 0 7.5 6.5 6 (on) 5.5 5.0 4.5 4.0 98% 3.5 3.0 typ 2.5 2.0 1.5 1.0 0.5 0.0 ...
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Avalanche energy parameter 1. 125 mH GS 140 mJ 120 E 110 AS 100 ...
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Package outlines SOT-223 Dimensions in mm Rev 2.0 9 BSP 298 2005-11-23 ...