FCB20N60 Fairchild Semiconductor, FCB20N60 Datasheet

MOSFET, N, D2-PAK

FCB20N60

Manufacturer Part Number
FCB20N60
Description
MOSFET, N, D2-PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCB20N60

Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
150mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCB20N60
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FCB20N60F
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FCB20N60F
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FCB20N60TM
Manufacturer:
ON/安森美
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FCB20N60 Rev. A3
• RoHS Compliant
FCB20N60
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
T
STG
*
DS(on)
J
= 150°C
= 0.15Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
g
= 75nC)
S
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
oss
= 25°C)
.eff = 165pF)
D
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TM
G
is, Fairchild’s proprietary, new generation of high
FCB20N60
-55 to +150
FCB20N60
D
S
12.5
± 30
20.8
1.67
600
690
208
300
4.5
20
60
20
62.5
0.6
40
SuperFET
December 2008
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCB20N60 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. A3 Description SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 165pF) ...

Page 2

... ≤ 20A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCB20N60 Rev. A3 Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Conditions 250µ 25° ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 10000 9000 8000 7000 C 6000 oss 5000 4000 C iss 3000 2000 C rss 1000 Drain-Source Voltage [V] DS FCB20N60 Rev. A3 Figure 2. Transfer Characteristics Notes : 1. 250 s Pulse Test µ ° Figure 4. Body Diode Forward Voltage 10V 20V Note : T ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCB20N60 Rev. A3 (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 Notes : 250 A µ 0.5 D 0.0 100 150 200 -100 C] ° Figure 10. Maximum Drain Current vs. Case Temperature 25 20 ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FCB20N60 Rev. A3 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCB20N60 Rev. A3 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FCB20N60 Rev -PAK 2 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCB20N60 Rev. A3 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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