FQD18N20V2 Fairchild Semiconductor, FQD18N20V2 Datasheet - Page 2

• Manufacturer Part Number: FQD18N20V2
• Description: MOSFET, N, D-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of FQD18N20V2

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
g
gs
gd
rr
DSS
≤ 18A, di/dt ≤ 200A/ s, V
DSS
eff.
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 18A, V
DD
= 50V, R
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
f = 1.0 MHz
V
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 200 V, V
= 160 V, T
= V
= 40 V, I
= 25 V, V
= 160 V, V
= 0V to 160 V, V
= 160 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 100 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
= 250 A
= 15 A
= 18 A,
GS
DS
D
D
= 250 A
DS
= 7.5 A
GS
C
= 7.5 A
GS
= 18 A,
= 18 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
= 0 V,
GS
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
200
3.0
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0.25
0.12
Typ
830
200
135
133
158
5.6
1.0
11
25
70
16
38
62
20
10
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1080
Max
-100
0.14
100
260
275
135
5.0
1.5
10
33
40
85
26
15
60
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1
Rev. B2, January 2009
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C