IPB04CN10N G Infineon Technologies, IPB04CN10N G Datasheet

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IPB04CN10N G

Manufacturer Part Number
IPB04CN10N G
Description
MOSFET, N CH, 100A, 100V, PG-TO263-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPB04CN10N G

Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
3.2mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.4
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
2 Power-Transistor
IPB04CN10N G
PG-TO263-3
04CN10N
3)
4)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPI04CN10N G
PG-TO262-3
04CN10N
stg
T
T
T
I
T
D
page 1
C
C
C
C
=100 A, R
=25 °C
=100 °C
=25 °C
=25 °C
2)
GS
=25 Ω
Product Summary
V
R
I
IPP04CN10N G
PG-TO220-3
04CN10N
D
DS
DS(on),max (TO 263)
IPB04CN10N G
-55 ... 175
55/175/56
Value
1000
100
100
400
±20
300
IPP04CN10N G
IPI04CN10N G
100
100
3.9
Unit
A
mJ
V
W
°C
V
A
2010-01-13

Related parts for IPB04CN10N G

IPB04CN10N G Summary of contents

Page 1

... IPI04CN10N G IPP04CN10N G PG-TO262-3 PG-TO220-3 04CN10N 04CN10N Symbol Conditions 2) =25 ° =100 ° =25 ° D,pulse C =25 Ω =100 =25 ° tot stg page 1 IPB04CN10N G IPI04CN10N G IPP04CN10N G 100 V 3.9 mΩ 100 A Value Unit 100 A 100 400 1000 mJ ±20 V 300 W -55 ... 175 °C 55/175/56 2010-01-13 ...

Page 2

... GSS =100 DS(on = =100 TO263 |>2 DS(on)max g fs =100 =0.5 K/W the chip is able to carry 182 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPB04CN10N G IPI04CN10N G IPP04CN10N G Values Unit min. typ. max 0.5 K 100 - - 0.1 1 µ 100 - 1 100 ...

Page 3

... MHz C rss t d(on =1.6 Ω = d(off = =100 plateau = oss =25 ° S,pulse = =100 =25 ° = /dt =100 A/µ page 3 IPB04CN10N G IPI04CN10N G IPP04CN10N G Values Unit min. typ. max. - 10400 13800 pF - 1590 2110 - 86 129 - 117 - 76 114 - 158 210 - 5 168 223 100 400 - 1.0 1 100 - ns - 300 - nC 2010-01-13 ...

Page 4

... Rev. 1.4 2 Drain current =f 120 100 100 150 200 0 [° Max. transient thermal impedance =f(t Z thJC p parameter µs 100 µs 10 µ [V] DS page 4 IPB04CN10N G IPI04CN10N G IPP04CN10N G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2010-01-13 ...

Page 5

... DS(on)max parameter 300 250 200 150 100 175 ° Rev. 1.4 6 Typ. drain-source on resistance =f(I R DS(on) parameter [ Typ. forward transconductance =f 200 160 120 80 25 ° [V] GS page 5 IPB04CN10N G IPI04CN10N G IPP04CN10N =25 ° 4 100 I [A] D =25 ° 100 I [ 150 150 2010-01-13 ...

Page 6

... V GS(th) parameter 3.5 3 2.5 2 typ 1 100 140 180 -60 [° Forward characteristics of reverse diode =f parameter [V] DS page 6 IPB04CN10N G IPI04CN10N G IPP04CN10N 2500 µA 250 µA - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1 1.5 V [V] SD 180 2 2010-01-13 ...

Page 7

... T Rev. 1.4 14 Typ. gate charge =f parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB04CN10N G IPI04CN10N G IPP04CN10N =100 A pulsed gate 100 150 Q [nC] gate 200 Q g ate 2010-01-13 ...

Page 8

... PG-TO220-3: Outline Rev. 1.4 IPB04CN10N G page 8 IPI04CN10N G IPP04CN10N G 2010-01-13 ...

Page 9

... Rev. 1.4 IPB04CN10N G page 9 IPI04CN10N G IPP04CN10N G 2010-01-13 ...

Page 10

... PG-TO-263 (D²-Pak) Rev. 1.4 IPB04CN10N G page 10 IPI04CN10N G IPP04CN10N G 2010-01-13 ...

Page 11

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the use or other persons may be endangered. Rev. 1.4 IPB04CN10N G page 11 IPI04CN10N G IPP04CN10N G 2010-01-13 ...

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