This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • ...
... Total power output ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power LED55B (7) Total Power LED55C (7) Total Power LED56 (7) Rise Time 0-90% of output Fall Time 100-10% of output www.fairchildsemi.com ...
... Figure 4. Forward Voltage vs. Forward Current 100 100 1.0 1 FORWARD VOLTAGE (V) F DS300312 6/05/01 GaAs INFRARED EMITTING DIODE LED55B Figure 1. Power Output vs. Input Current NORMALIZED 100 .002 .005 .01 .02 .05 0.1 0.2 0 FORWARD CURRENT (A) F Figure 3. Forward Voltage vs. Forward Current 10 8.0 6.0 4.0 2 ...
... GaAs INFRARED EMITTING DIODE LED55B LED55C 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness ...