BPW36 Fairchild Semiconductor, BPW36 Datasheet - Page 3

• Manufacturer Part Number: BPW36
• Description: Photodetector Transistors 6mA IR PHOTO TRAN
• Manufacturer: Fairchild Semiconductor
• Type: Photo Transistorr

Specifications of BPW36

• Maximum Power Dissipation: 600 mW
• Maximum Dark Current: 100 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 65 C
• Package / Case: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DS300279
TYPICAL PERFORMANCE CURVES
10.0
10
1.0
0.1
10
10
10
10
10
1.0
0.1
3/13/01
6
5
4
3
2
0
Fig. 3 Normalized Light Current vs. Temperature
Fig. 5 Dark Current vs. Temperature
25
-50
T
T
A
50
A
0
- TEMPERATURE (˚C)
- TEMPERATURE (˚C)
75
50
Normalized to:
V
Ee = 10 mW/cm
T
Normalized to:
I
V
D
CE
A
CEO
@ 25˚C
= 25˚C
= 5 V
= 10 V
100
100
HERMETIC SILICON PHOTOTRANSISTOR
2
125
150
150
3 OF 4
1.0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0
0.1
Fig. 6 Normalized Light Current vs. Temperature
Fig. 4 Switching Times vs. Output Current
55
(BPW36 or BPW37) at Same Temperature
Normalized to:
V
I
t
R
L
ON
CE
L
= 2 mA
Both Emitter (CQX14) and Detector
= 100
= t
= 10 V
35
OFF
= 5
I
L
BPW36/BPW37
T
15
- OUTPUT CURRENT (mA)
µs
A
1.0
- TEMPERATURE (˚C)
5
Normalized to:
CQX14 Input = 10 mA
V
I
T
L
A
CEO
= 100 µA
CQX14
= 25˚C
= 10 V
25
R
45
L
10
= 1 k
BPW36 OR
BPW37
www.fairchildsemi.com
65
R
R
L
L
= 100
= 10
85
100
105