QSC114C Fairchild Semiconductor, QSC114C Datasheet

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QSC114C

Manufacturer Part Number
QSC114C
Description
Photodetector Transistors 4mA PHOTO TRANS
Manufacturer
Fairchild Semiconductor
Type
IR Chipr
Datasheet

Specifications of QSC114C

Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
30 V
Fall Time
5 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
5 us
Package / Case
T-1
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
4mA
Power Dissipation
100mW
Peak Wavelength
880nm
Half-intensity Angle
8deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Lead Free Status / Rohs Status
Compliant
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
Package Dimensions
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
Tight production distribution
Steel lead frames for improved reliability in solder
mounting
Good optical-to-mechanical alignment
Plastic package is infrared transparent black to
attenuate visible light
Can be used with QECXXX LED
Black plastic body allows easy recognition from LED
REFERENCE
unless otherwise specified.
SURFACE
0.032 (0.082)
0.052 (1.32)
0.800 (20.3)
0.050 (1.27)
0.116 (2.95)
0.018 (0.46)
SQ. (2X)
PACKAGE DIMENSIONS
MIN
0.100 (2.54)
0.193 (4.90)
0.030 (0.76)
0.155 (3.94)
NOM
EMITTER
NOM
Description
The QSC112/113/114 is a silicon phototransistor encap-
sulated in an infrared transparent, black T-1 package.
Schematic
COLLECTOR
EMITTER
www.fairchildsemi.com
April 2007
tm

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QSC114C Summary of contents

Page 1

... SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.10 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 Description The QSC112/113/114 is a silicon phototransistor encap- sulated in an infrared transparent, black T-1 package. ...

Page 2

... C(ON) On-State Collector Current QSC113 On-State Collector Current QSC114 V Saturation Voltage CE(sat) t Rise Time r t Fall Time f Note: 5. λ = 880 nm, AlGaAs. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0 25°C unless otherwise specified) A (2,3,4) (2,3) (1) (T =25°C) A Test Conditions ...

Page 3

... E - Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage Collector-Emitter Voltage (V) CE ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 130° 140° 150° 160° 170° 180° 1 Figure 5. Dark Current vs. Ambient Temperature 4 10 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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