FCA36N60NF Fairchild Semiconductor, FCA36N60NF Datasheet - Page 3
![MOSFET N-CH 600V 34.9A TO3PN](/photos/39/69/396906/to3pn_sml.jpg)
FCA36N60NF
Manufacturer Part Number
FCA36N60NF
Description
MOSFET N-CH 600V 34.9A TO3PN
Manufacturer
Fairchild Semiconductor
Series
SupreMOS®, FRFET®r
Datasheet
1.FCA36N60NF.pdf
(8 pages)
Specifications of FCA36N60NF
Input Capacitance (ciss) @ Vds
4245pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
95 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
34.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
112nC @ 10V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
80 mOhms
Forward Transconductance Gfs (max / Min)
39 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
34.9 A
Power Dissipation
312 W
Mounting Style
Through Hole
Fall Time
4 ns
Gate Charge Qg
86 nC
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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FCA36N60NF Rev. A
Typical Performance Characteristics
100000
10000
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
150
125
100
200
100
Figure 1. On-Region Characteristics
10
10
75
50
1
1
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Notes:
GS
1. V
2. f = 1MHz
=
GS
18
15.0 V
10.0 V
V
Drain Current and Gate Voltage
8.0 V
7.0 V
6.0 V
5.0 V
V
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
36
, Drain Current [A]
(
C ds = shorted
1
V
GS
54
= 10V
10
*Notes:
1. 250
2. T
)
*Notes: T
C
72
V
= 25
GS
μ
s Pulse Test
= 20V
o
100
C
C
C
C
90
C
= 25
rss
iss
10
oss
o
C
600
108
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
200
100
200
100
0.2
0.2
10
10
10
1
1
8
6
4
2
0
0.2
2
0
V
0.4
SD
Variation vs. Source Current
150
and Temperature
20
, Body Diode Forward Voltage [V]
150
V
Q
4
GS
o
C
g
o
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
C
0.6
V
DS
40
-55
= 120V
o
0.8
6
C
25
o
*Notes:
25
C
1. V
2. 250
60
o
V
C
*Notes:
1. V
2. 250
DS
1.0
*Notes: I
DS
GS
= 480V
μ
= 20V
s Pulse Test
μ
= 0V
8
s Pulse Test
V
80
DS
D
1.2
= 300V
= 18A
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100
10
1.4