H11F3SR2M Fairchild Semiconductor, H11F3SR2M Datasheet - Page 10

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H11F3SR2M

Manufacturer Part Number
H11F3SR2M
Description
Transistor Output Optocouplers FET Bilateral analog
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of H11F3SR2M

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Isolation Voltage
5300 Vrms
Maximum Forward Diode Voltage
1.75 V
Maximum Power Dissipation
300 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-6 Gull Wing
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.4
Reflow Profile
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t
Ramp-up Rate (t
Liquidous Temperature (T
Time (t
Peak Body Package Temperature
Time (t
Ramp-down Rate (T
Time 25°C to Peak Temperature
260
240
220
200
180
160
140
120
100
80
60
40
20
0
S
L
P
) Maintained Above (T
) from (Tsmin to Tsmax)
) within 5°C of 260°C
T
T
L
Profile Freature
P
Tsmax
Tsmin
L
to t
P
Max. Ramp-down Rate = 6°C/S
P
Max. Ramp-up Rate = 3°C/S
to T
Preheat Area
)
L
L
120
)
)
Time 25°C to Peak
L
)
Time (seconds)
10
t
Pb-Free Assembly Profile
s
240
260°C +0°C / –5°C
3°C/second max.
6°C/second max.
60–120 seconds
60–150 seconds
8 minutes max.
30 seconds
150°C
200°C
217°C
t
L
t
P
360
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