H11F3SR2M Fairchild Semiconductor, H11F3SR2M Datasheet - Page 4

• Manufacturer Part Number: H11F3SR2M
• Description: Transistor Output Optocouplers FET Bilateral analog
• Manufacturer: Fairchild Semiconductor

Specifications of H11F3SR2M

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.75 V
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.4
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
V
V
V
RIO
CTI
IORM
IOTM
PR
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V
IORM
IORM
x 1.875 = V
x 1.5 = V
PR
PR
, Type and Sample Test
Parameter
, 100% Production Test
IO
= 500V
4
Min.
1594
1275
6000
175
850
10
0.5
7
7
9
55/100/21
Typ.
I-IV
I-IV
2
Max.
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V
V
V
V
Unit
mm
mm
mm
peak
peak
peak
peak