H11F3SR2M Fairchild Semiconductor, H11F3SR2M Datasheet - Page 4

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H11F3SR2M

Manufacturer Part Number
H11F3SR2M
Description
Transistor Output Optocouplers FET Bilateral analog
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of H11F3SR2M

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Isolation Voltage
5300 Vrms
Maximum Forward Diode Voltage
1.75 V
Maximum Power Dissipation
300 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-6 Gull Wing
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.4
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
V
V
V
RIO
CTI
IORM
IOTM
PR
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V
IORM
IORM
x 1.875 = V
x 1.5 = V
PR
PR
, Type and Sample Test
Parameter
, 100% Production Test
IO
= 500V
4
Min.
1594
1275
6000
175
850
10
0.5
7
7
9
55/100/21
Typ.
I-IV
I-IV
2
Max.
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V
V
V
V
Unit
mm
mm
mm
peak
peak
peak
peak

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