H11F3SR2M Fairchild Semiconductor, H11F3SR2M Datasheet - Page 2

• Manufacturer Part Number: H11F3SR2M
• Description: Transistor Output Optocouplers FET Bilateral analog
• Manufacturer: Fairchild Semiconductor

Specifications of H11F3SR2M

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.75 V
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
TOTAL DEVICE
EMITTER
DETECTOR
Symbol
BV
T
T
T
I
F(pk)
I
V
P
P
OPR
STG
SOL
4-6
I
F
R
D
D
4-6
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (10µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Detector Power Dissipation @ 25°C
Breakdown Voltage (either polarity)
Continuous Detector Current (either polarity)
Derate Linearly from 25°C
Derate linearly from 25°C
(T
A
= 25°C unless otherwise specified)
2
H11F1M,
H11F2M
H11F3M
Device
All
All
All
All
All
All
All
All
All
260 for 10 sec
-40 to +150
-40 to +100
Value
±100
1.33
100
300
±30
±15
4.0
60
5
1
www.fairchildsemi.com
mW/°C
mW/°C
Units
mW
mW
mA
mA
°C
°C
°C
V
A
V
V