2KBP10M Fairchild Semiconductor, 2KBP10M Datasheet
2KBP10M
Manufacturer Part Number
2KBP10M
Description
DIODE BRIDGE 1000V 2A KBPM
Manufacturer
Fairchild Semiconductor
Specifications of 2KBP10M
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
2A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
KBPM
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Forward Continuous Current
2 A
Max Surge Current
60 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Power Dissipation
4.7 W
Maximum Operating Temperature
+ 150 C
Length
15.24 mm
Width
5.08 mm
Height
12.7 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
2A
Forward Voltage Vf Max
1.1V
Power Dissipation Pd
4.7W
Diode Mounting Type
Through Hole
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2KBP10M
Manufacturer:
FSC
Quantity:
4 560
Part Number:
2KBP10M
Manufacturer:
PANJIT/强茂
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
2KBP005M/3N253 - 2KBP10M/3N259 Rev. E
2KBP005M/3N253 - 2KBP10M/3N259
Bridge Rectifiers
Features
• Surge overload rating: 60 amperes peak.
• Reliable low cost construction utilizing molded plastic technique.
• UL certified, UL #E111753.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on PCB with 0.47 × 0.47” (12 × 12mm).
Electrical Characteristics
V
V
V
I
I
T
T
F(AV)
FSM
P
R
V
I
C
Symbol
R
STG
J
RRM
RMS
R
D
F
Symbol
θJA
Symbol
T
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated V
Average Recitified Forward Current,
@ T
Non-Repetitive Peak Forward Surge Current
Storage Temperature Range
Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Forward Voltage, per element @ 3.14A
Reverse Current, per element @ Rated V
I
Total Capacitance, per leg
2
A
t Rating for Fusing
= 50°C
8.3ms Single Half-Sine-Wave
V
R
= 4.0 V, f = 1.0 MHz
Parameter
Parameter
Parameter
t < 8.35ms
T
R
C
)
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
R
T
+
005M 01M
T
A
253
KBPM
A
_
50
35
50
= 125°C
= 25°C
1
_
_
254
100
100
70
02M
255
200
140
200
-55 to +150
-55 to +150
Value
Value
Value
04M
256
500
400
280
400
4.7
1.1
2.0
18
50
15
25
60
06M
257
600
420
600
08M
258
800
560
800
10M
1000
1000
259
700
Units
Units
www.fairchildsemi.com
°C/W
A
March 2006
µA
µA
pF
W
V
2
s
Units
°C
°C
V
V
V
A
A
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2KBP10M Summary of contents
Page 1
... Electrical Characteristics Symbol V Forward Voltage, per element @ 3.14A F I Reverse Current, per element @ Rated Rating for Fusing C Total Capacitance, per leg 4 1.0 MHz R ©2006 Fairchild Semiconductor Corporation 2KBP005M/3N253 - 2KBP10M/3N259 Rev KBPM T = 25°C unless otherwise noted a 005M 01M 253 254 50 100 ...
Page 2
... Typical Performance Characteristics 2.5 2.0 1.5 1.0 0.5 0 Ambient Temperature ( 2KBP005M/3N253 - 2KBP10M/3N259 Rev. E 100 125 150 www.fairchildsemi.com ...
Page 3
... Definition of Terms Definition of Terms Datasheet Identification Datasheet Identification Advance Information Advance Information Preliminary Preliminary No Identification Needed No Identification Needed Obsolete Obsolete 2KBP005M/3N253 - 2KBP10M/3N259 Rev. E ISOPLANAR™ ISOPLANAR™ PowerSaver™ PowerSaver™ LittleFET™ LittleFET™ PowerTrench PowerTrench MICROCOUPLER™ MICROCOUPLER™ QFET QFET MicroFET™ ...