2N5088 Fairchild Semiconductor, 2N5088 Datasheet
2N5088
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2N5088 Summary of contents
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... SOT-23 Mark 25°C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 TA = 25°C unless otherwise noted 2N5088 2N5089 625 5.0 83.3 200 E B Value Units 4.5 V 100 mA -55 to +150 C Max Units *MMBT5088 *MMBT5089 350 mW 2.8 mW/ C C/W 357 C/W 2N5088/2N5089/MMBT5088/MMBT5089, Rev A ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V CE( sat ) ...
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Typical Characteristics Typical Pulsed Current Gain vs Collector Current 1200 125 °C 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector ...
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Typical Characteristics Input and Output Capacitance vs Reverse Bias Voltage REVERSE BIAS VOLTAGE (V) Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 100 ...
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Typical Characteristics Contours of Constant Narrow Band Noise Figure 10,000 5,000 2,000 1,000 500 100 Hz BANDWIDTH 200 = 20 Hz 100 1 10 100 I - COLLECTOR CURRENT ( C Contours of ...
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Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 1.3 h 1 COLLECTOR VOLTAGE (V) CE Typical Common Emitter Characteristics 100 10 h ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...