IDB09E120 Infineon Technologies, IDB09E120 Datasheet - Page 3
IDB09E120
Manufacturer Part Number
IDB09E120
Description
Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 9A
Manufacturer
Infineon Technologies
Datasheet
1.IDB09E120.pdf
(8 pages)
Specifications of IDB09E120
Product
Power Diodes
Peak Reverse Voltage
1200 V
Forward Continuous Current
9 A
Max Surge Current
50 A
Configuration
Single
Recovery Time
140 ns
Forward Voltage Drop
2.15 V
Maximum Reverse Leakage Current
100 uA
Maximum Power Dissipation
69 W
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packages
PG-TO263-3
If (typ)
9.0 A
If (max)
23.0 A
If,sm (max)
50.0 A
Vf (typ)
1.65 V
Ir (max)
100.0 µA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDB09E120
Manufacturer:
INFINEON
Quantity:
12 500
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Reverse recovery time
V
V
V
Peak reverse current
V
V
V
Reverse recovery charge
V
V
V
Reverse recovery softness factor
V
V
V
Rev.2.2
R
R
R
R
R
R
R
R
R
R
R
R
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
F
F
F
F
F
F
F
F
F
F
F
F
=9A, di
=9A, di
=9A, di
=9A, di
=9A, di
=9A, di
=9A, di
= 9 A, di
=9A, di
=9A, di
=9A, di
=9A, di
F
F
F
F
F
F
F
F
F
F
F
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
F
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
j
j
j
j
j
j
j
=25°C
=125°C
=150°C
=25°C
=25°C
=125°C
=150°C
j
j
j
j
=125°C
=150°C
=125°C
=150°C
j
=25°C
j
= 25 °C, unless otherwise specified
Page 3
Symbol
t
I
Q
S
rr
rrm
rr
min.
-
-
-
-
-
-
-
-
-
-
-
-
Values
1470
1600
13.3
16.1
16.5
140
200
210
typ.
950
5.4
6.5
6.6
max.
IDB09E120
2007-09-01
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
A
nC