IDP09E60 Infineon Technologies, IDP09E60 Datasheet - Page 5

• Manufacturer Part Number: IDP09E60
• Description: Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 600V 9A
• Manufacturer: Infineon Technologies

Specifications of IDP09E60

• Product: Power Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 9 A
• Max Surge Current: 40 A
• Configuration: Single
• Recovery Time: 75 ns
• Forward Voltage Drop: 2 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 57.7 W
• Operating Temperature Range: - 55 C to + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Package / Case: TO-220-2
• Packages: PG-TO220-2
• If (typ): 9.0 A
• If (max): 19.3 A
• If,sm (max): 40.0 A
• Vf (typ): 1.5 V
• Ir (max): 50.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.2
5 Typ. reverse recovery time
t
parameter: V
7 Typ. reverse recovery current
I
parameter: V
rr
rr
= f (di
= f (di
ns
A
350
250
200
150
100
50
14
12
11
10
200
9
8
7
6
5
4
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 400V, T
= 400V, T
18A
9A
4.5A
500
500
600
600
j
j
= 125°C
= 125°C
700
700
18A
9A
4.5A
800
800
A/µs
A/µs
di
di
F
F
1000
1000
/dt
/dt
Page 5
6 Typ. reverse recovery charge
Q
parameter: V
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
rr
nC
=f(di
800
700
650
600
550
500
450
400
350
300
14
10
200
8
6
4
2
0
200
F
F
/dt)
/dt)
300
300
R
R
18A
9A
4.5A
400
400
= 400V, T
= 400V, T
500
500
600
600
j
j
= 125 °C
= 125°C
700
700
2003-07-31
IDB09E60
IDP09E60
800
800
A/µs
18A
9A
4.5A
A/µs
di
di
F
F
/dt
1000
1000
/dt