BSM100GB170DN2 Infineon Technologies, BSM100GB170DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM100GB170DN2
• Description: IGBT Modules 1700V 100A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM100GB170DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 3.4 V
• Continuous Collector Current At 25 C: 145 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 1 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Ic (max): 100.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 100 GB 170 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
9
Oct-27-1997