DDB2U30N08VR Infineon Technologies, DDB2U30N08VR Datasheet - Page 3
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DDB2U30N08VR
Manufacturer Part Number
DDB2U30N08VR
Description
IGBT Modules N-CH 600V 25A
Manufacturer
Infineon Technologies
Datasheet
1.DDB2U30N08VR.pdf
(8 pages)
Specifications of DDB2U30N08VR
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
25 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY750
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
25A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Packages
AG-EASY750-1
Vrrm (max)
800.0 V
Id
48
Rthjc (max)
1.3 K/W
Housing
EasyBRIDGE 750
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DDB2U30N08VR
Manufacturer:
SEMIKRON
Quantity:
1 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
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Vorläufige Daten
preliminary data
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