FZ800R12KL4C Infineon Technologies

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FZ800R12KL4C

Manufacturer Part Number
FZ800R12KL4C
Description
IGBT Modules 1200V 800A SINGLE
Manufacturer
Infineon Technologies

Specifications of FZ800R12KL4C

Configuration
Dual Common Emitter Common Gate
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
1300 A
Gate-emitter Leakage Current
600 nA
Power Dissipation
5 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM130
Ic (max)
800.0 A
Vce(sat) (typ)
2.1 V
Technology
IGBT2 Low Loss
Housing
IHM 130 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZ800R12KL4C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FZ800R12KL4C
Quantity:
55

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