DDB6U25N16VR Infineon Technologies, DDB6U25N16VR Datasheet - Page 7

• Manufacturer Part Number: DDB6U25N16VR
• Description: IGBT Modules N-CH 1.2KV 25A
• Manufacturer: Infineon Technologies

Specifications of DDB6U25N16VR

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 25 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY750
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Packages: AG-EASY750-1
• Vdrm/ Vrrm (v): 1,600.0 V
• Ifsm (max): 330.0 A
• Housing: EasyBRIDGE™ 750
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
DDB6U25N16VR
7
Vorläufige Daten
preliminary data