FZ1200R12KL4C Infineon Technologies

FZ1200R12KL4C

Manufacturer Part Number

FZ1200R12KL4C

Description

IGBT Modules 1200V 1200A SINGLE

Manufacturer

Infineon Technologies

Specifications of FZ1200R12KL4C

Configuration

Dual Common Emitter Common Gate

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

2.1 V

Continuous Collector Current At 25 C

1900 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

7.8 KW

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

IHM130

Ic (max)

1,200.0 A

Vce(sat) (typ)

2.1 V

Technology

IGBT2 Low Loss

Housing

IHM 130 mm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ1200R12KL4C

Manufacturer:

CIRRUS

Quantity:

310

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FZ1200R12KL4C

Quantity:

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